Low-Temperature Bonding of Nanolayered InGaP/SiO₂ Waveguides for Spontaneous-Parametric Down Conversion

The integration of III–V materials on photonic integrated circuits has enjoyed a lot attention because the necessity merging photon sources with silicon electronics. Nevertheless, source technologies are not sufficiently mature, inhibiting employment such platforms to broader range applications. Here, we present novel approach that enables transfer nanolayers (≈250 nm) silicates via oxide bonding. Through use thick photoresist scaffold (≈30 μm), complete removal substrate can be performed while preserving relative structure morphology. native without depositing interfacial layers greatly reduces processing time and cost. an array composed 1 mm long InGaP waveguides 250 nm thickness widths spanning from 0.7 11.2 μm SiO2 been experimentally demonstrated, evidencing feasibility technique for wafer-scale processing. application nanolayered in spontaneous-parametric down-conversion process tested by photon-correlation measurement, showing good agreement theoretical model.